RSR030N06TL [ROHM]
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN;
| 元器件型號： | RSR030N06TL |
| 生產廠家： | 
ROHM
|
| 描述和應用： | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN 開關 光電二極管 晶體管 |
| PDF文件： | 總13頁 (文件大?。?459K) |
| 下載文檔： | 下載PDF數據表文檔文件 |
| 型號參數：RSR030N06TL參數 | |
| 是否無鉛 | 不含鉛 |
| 是否Rohs認證 | 符合 |
| 生命周期 | Not Recommended |
| 包裝說明 | SMALL OUTLINE, R-PDSO-G3 |
| 針數 | 3 |
| Reach Compliance Code | compliant |
| ECCN代碼 | EAR99 |
| 風險等級 | 7.84 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源擊穿電壓 | 60 V |
| 最大漏極電流 (Abs) (ID) | 3 A |
| 最大漏極電流 (ID) | 3 A |
| 最大漏源導通電阻 | 0.105 Ω |
| FET 技術 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代碼 | R-PDSO-G3 |
| JESD-609代碼 | e1 |
| 濕度敏感等級 | 1 |
| 元件數量 | 1 |
| 端子數量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作溫度 | 150 °C |
| 封裝主體材料 | PLASTIC/EPOXY |
| 封裝形狀 | RECTANGULAR |
| 封裝形式 | SMALL OUTLINE |
| 峰值回流溫度（攝氏度） | 260 |
| 極性/信道類型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 1 W |
| 認證狀態 | Not Qualified |
| 子類別 | FET General Purpose Power |
| 表面貼裝 | YES |
| 端子面層 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 處于峰值回流溫度下的最長時間 | 10 |
| 晶體管應用 | SWITCHING |
| 晶體管元件材料 | SILICON |
| Base Number Matches | 1 |
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