SSP1N55 [SAMSUNG]
Power Field-Effect Transistor, 1A I(D), 550V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
| 元器件型號： | SSP1N55 |
| 生產廠家： | 
SAMSUNG SEMICONDUCTOR
|
| 描述和應用： | Power Field-Effect Transistor, 1A I(D), 550V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域網 開關 脈沖 晶體管 |
| PDF文件： | 總3頁 (文件大?。?9K) |
| 下載文檔： | 下載PDF數據表文檔文件 |
| 型號參數：SSP1N55參數 | |
| 生命周期 | Obsolete |
| IHS 制造商 | SAMSUNG SEMICONDUCTOR INC |
| 零件包裝代碼 | SFM |
| 包裝說明 | TO-220, 3 PIN |
| 針數 | 3 |
| Reach Compliance Code | unknown |
| ECCN代碼 | EAR99 |
| 風險等級 | 5.68 |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源擊穿電壓 | 550 V |
| 最大漏極電流 (Abs) (ID) | 1 A |
| 最大漏極電流 (ID) | 1 A |
| 最大漏源導通電阻 | 12 Ω |
| FET 技術 | METAL-OXIDE SEMICONDUCTOR |
| 最大反饋電容 (Crss) | 20 pF |
| JEDEC-95代碼 | TO-220AB |
| JESD-30 代碼 | R-PSFM-T3 |
| 元件數量 | 1 |
| 端子數量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作溫度 | 150 °C |
| 封裝主體材料 | PLASTIC/EPOXY |
| 封裝形狀 | RECTANGULAR |
| 封裝形式 | FLANGE MOUNT |
| 極性/信道類型 | N-CHANNEL |
| 功耗環境最大值 | 50 W |
| 最大功率耗散 (Abs) | 50 W |
| 最大脈沖漏極電流 (IDM) | 3 A |
| 認證狀態 | Not Qualified |
| 子類別 | FET General Purpose Power |
| 表面貼裝 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶體管應用 | SWITCHING |
| 晶體管元件材料 | SILICON |
| 最大關閉時間（toff） | 90 ns |
| 最大開啟時間（噸） | 35 ns |
| Base Number Matches | 1 |
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